| PART |
Description |
Maker |
| HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group
SIEMENS AG
|
| IC41SV44052 IC41SV44054 IC41SV44052-70J IC41SV4405 |
DYNAMIC RAM, FPM DRAM
4Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc]
http://
|
| IC41C16105S IC41LV16105S IC41C16105S-50K IC41C1610 |
DYNAMIC RAM, FPM DRAM
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http://
SIEMENS A G
SIEMENS AG
|
| IC41C8512 IC41LV8512 IC41LV8512-60TI IC41C8512-35K |
DYNAMIC RAM, EDO DRAM
512K x 8 bit Dynamic RAM with EDO Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| IC41LV44002AS IC41LV44002A IC41C44002A IC41C44002A |
DYNAMIC RAM, EDO DRAM
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| HYM361140GS-70 HYM361140GS-60 HYM361140S-70 HYM361 |
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 100万36位动态RAM模块米18位动态随机存储器模块
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYM321000GS-60 HYM321000S-50 HYM321000GS-50 HYM321 |
1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module 1M X 32 FAST PAGE DRAM MODULE, 60 ns, SMA72
1M x 32 Bit DRAM Module
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| HYM322030GS-70 HYM322030GS-60 HYM322030GS-50 HYM32 |
2M x 32-Bit Dynamic RAM Module 200万32位动态随机存储器模块
2M x 32-Bit Dynamic RAM Module 2M X 32 FAST PAGE DRAM MODULE, 50 ns, SMA72
2M x 32-Bit Dynamic RAM Module 2M X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72
2M x 32 Bit DRAM Module
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
